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Microwave-driven coherent operations of a semiconductor quantum dot charge qubit

机译:微波驱动的半导体量子点的相干操作   充电量子比特

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摘要

A most intuitive realization of a qubit is a single electron charge sittingat two well-defined positions, such as the left and right sides of a doublequantum dot. This qubit is not just simple but also has the potential forhigh-speed operation, because of the strong coupling of electric fields to theelectron. However, charge noise also couples strongly to this qubit, resultingin rapid dephasing at nearly all operating points, with the exception of onespecial 'sweet spot'. Fast dc voltage pulses have been used to manipulatesemiconductor charge qubits, but these previous experiments did not achievehigh-fidelity control, because dc gating requires excursions away from thesweet spot. Here, by using resonant ac microwave driving, we achieve coherentmanipulation of a semiconductor charge qubit, demonstrating a Rabi frequency ofup to 2GHz, a value approaching the intrinsic qubit frequency of 4.5GHz. Z-axisrotations of the qubit are well-protected at the sweet spot, and by using acgating, we demonstrate the same protection for rotations about arbitrary axesin the X-Y plane of the qubit Bloch sphere. We characterize operations on thequbit using two independent tomographic approaches: standard process tomographyand a newly developed method known as gate set tomography. Both approaches showthat this qubit can be operated with process fidelities greater than 86% withrespect to a universal set of unitary single-qubit operations.
机译:量子位的最直观实现是位于两个明确定义的位置(例如双量子点的左侧和右侧)的单个电子电荷。由于电场与电子之间的强耦合,该量子位不仅简单,而且具有高速运行的潜力。但是,电荷噪声也与该量子位紧密耦合,从而导致几乎所有工作点都出现快速移相,只有一个特殊的“最佳点”除外。快速的直流电压脉冲已被用于操纵半导体电荷量子位,但是这些先前的实验并未实现高保真度控制,因为直流选通需要远离最佳点的偏移。在这里,通过使用谐振交流微波驱动,我们实现了半导体电荷量子比特的相干操纵,展示了高达2GHz的拉比频率,该值接近4.5GHz的固有量子比特频率。量子位的Z轴旋转在最佳位置得到了很好的保护,并且通过使用相交,我们证明了在量子位Bloch球的X-Y平面中绕任意轴旋转的相同保护。我们使用两种独立的层析成像方法来表征Qubit的操作:标准过程层析成像和一种新开发的方法,称为门集合层析成像。两种方法都表明,相对于一组统一的单一单量子位运算,该量子位可以以高于86%的过程保真度进行操作。

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